飞利浦 PBSS5160DS 数据手册
1.Product profile
1.1General description
PNP/PNP low V CEsat  Breakthrough in Small Signal (BISS) transistor pair in a SOT457(SC-74) Surface Mounted Device (SMD) plastic package.NPN complement:PBSS4160DS.
1.2Features
s Low collector-emitter saturation voltage V CEsat s High collector current capability: I C  and I CM s High collector current gain (h FE ) at high I C s High efficiency due to less heat generation
s
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3Applications
s Dual low power switches (e.g. motors, fans)s Automotive applications
1.4Quick reference data
[1]Device mounted on a ceramic PCB, Al 2O 3, standard footprint.[2]
Pulse test: t p ≤300µs;δ≤0.02.
PBSS5160DS
多少遗憾
60 V , 1 A PNP low V CEsat  (BISS) transistor
Rev. 02 — 28 June 2005
Product data sheet
Table 1:Quick reference data Symbol Parameter
Conditions Min Typ Max Unit V CEO collector-emitter voltage open base
--−60V I C collector current (DC)[1]
--−1A I CM peak collector current single pulse;t p ≤1ms --−2A R CEsat
collector-emitter saturation resistance
I C =−1A;I B =−100mA
[2]
-
250
330
m Ω
查询PBSS5160DS供应商
2.Pinning information
3.Ordering information
4.Marking
5.Limiting values
Table 2:Pinning
Pin Description Simplified outline
Symbol
1emitter TR12base TR13collector TR24emitter TR25base TR26
collector TR1
13
24
5
6
sym018
2
1
3
5
6
TR1
TR2
4
Table 3:
赏月诗句Ordering information
Type number
Package Name
Description
Version PBSS5160DS SC-74
plastic surface mounted package; 6leads
SOT457
Table 4:
Marking codes
Type number Marking code PBSS5160DS
A5
Table 5:Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter
Conditions
Min Max Unit Per transistor
V CBO collector-base voltage open emitter -−80V V CEO collector-emitter voltage
open base -−60V V EBO emitter-base voltage open collector
-−5V I C
collector current (DC)
[1]-−0.77A [2]-−0.9A [3]
-−1A I CM peak collector current single pulse; t p ≤1ms -−2A I B base current (DC)-−300mA I BM
peak base current
single pulse; t p ≤1ms
-
−1
A
[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm 2.[3]
Device mounted on a ceramic PCB, Al 2O 3, standard footprint.
P tot
total power dissipation T amb ≤25°C
[1]-290mW [2]-370mW [3]
-450mW Per device P tot
total power dissipation T amb ≤25°C
[1]-420mW [2]-560mW [3]
-700mW T j junction temperature -150°C T amb ambient temperature −65+150°C T stg
storage temperature
−65
+150
°C
(1)Ceramic PCB, Al 2O 3, standard footprint (2)FR4 PCB, mounting pad for collector 1cm 2(3)FR4 PCB, standard footprint
Fig 1.Power derating curves
Table 5:Limiting values  …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter
Conditions
Min Max Unit 006aaa493
T amb  (°C)
0160
1204080
0.4
0.2
0.6
0.8P tot (W)0
(3)
(2)
(1)
6.Thermal characteristics
[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm 2.[3]
Device mounted on a ceramic PCB, Al 2O 3, standard footprint.
Table 6:Thermal characteristics Symbol Parameter
Conditions Min Typ Max Unit Per transistor
R th(j-a)
thermal resistance from junction to ambient
in free air
手办制作教程[1]--431K/W [2]--338K/W [3]
--278K/W R th(j-sp)
春卷皮的做法thermal resistance from junction to solder point -
-
105
K/W
Per device R th(j-a)
thermal resistance from junction to ambient
in free air
[1]--298K/W [2]--223K/W [3]
--179
K/W
FR4 PCB, standard footprint
Fig 2.Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa494
10−5
10
10−2
10−4
102
10−1
t p  (s)
10−3
103
1
102
经典喜剧片10
103Z th(j-a)(K/W)
10.100.050.020.01
0δ = 1
0.75
0.50
0.33
0.20
FR4 PCB, mounting pad for collector 1cm 2
Fig 3.Transient thermal impedance from junction to ambient as a function of pulse time; typical values
债务重组Ceramic PCB, Al 2O 3, standard footprint
Fig 4.Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa495
10−5
10
10−2
10−4
102
10−1
t p  (s)
10−3
103
1
102
10
103Z th(j-a)(K/W)
10.200.100.050.020.01
0δ = 1
0.75
0.500.33
006aaa496
10−5
10
10−210−4102
10−1
t p  (s)
10−3103
1102
10
103Z th(j-a)(K/W)
10.200.100.05
0.020.010
δ = 1
0.75
0.500.33

版权声明：本站内容均来自互联网，仅供演示用，请勿用于商业和其他非法用途。如果侵犯了您的权益请与我们联系QQ:729038198，我们将在24小时内删除。