SURFACE-EMITTING LASER DEVICE AND METHOD FOR MANUF
专利名称：SURFACE-EMITTING LASER DEVICE AND
METHOD FOR MANUFACTURING SURFACE-
EMITTING LASER DEVICE
发明人：Susumu NODA,Tomoaki KOIZUMI,Kei
EMOTO
申请号：US17123133
申请日：20201216
公开号：US20210184431A1
公开日：
20210617
专利内容由知识产权出版社提供
专利附图：
摘要：A method for manufacturing a GaN-based surface-emitting laser by an MOVPE
includes: (a) growing a first cladding layer with a {} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes which are two-dimensionally periodically arranged within the guide layer; (d) etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; (e) supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer on the first embedding layer, The step (d) includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.
申请人：Kyoto University,Stanley Electric Co., Ltd.
地址：Kyoto JP,Tokyo JP
怎么申请icp
国籍：JP,JP
更多信息请下载全文后查看

版权声明：本站内容均来自互联网，仅供演示用，请勿用于商业和其他非法用途。如果侵犯了您的权益请与我们联系QQ:729038198，我们将在24小时内删除。