Philips Semiconductors
lnx的定义域Product specification
Triacs BT131 series
logic level
倦的组词和拼音GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated,sensitive gate triacs in a SYMBOL PARAMETER
MAX.MAX.MAX.UNIT plastic envelope,intended for use in general purpose bidirectional BT131-500600800switching and phase control V DRM Repetitive peak off-state applications.These devices are voltages
伪劣商品500600800V intended to be interfaced directly to I T(RMS)RMS on-state current
111A microcontrollers,logic integrated I TSM
Non-repetitive peak on-state circuits and other low power gate current
16
16
16
A
trigger circuits.
PINNING - TO92
PIN CONFIGURATION
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER
CONDITIONS
MIN.MAX.UNIT -500-600-800V DRM Repetitive peak off-state -5001
6001800
V voltages
I T(RMS)RMS on-state current full sine wave; T lead ≤51 ˚C
-1A I TSM
Non-repetitive peak full sine wave; T j = 25 ˚C prior to on-state current surge t = 20 ms -16A t = 16.7 ms -17.6A I 2t I 2t for fusing
t = 10 ms
- 1.28A 2s dI T /dt
Repetitive rate of rise of I TM = 1.5 A; I G = 0.2 A;on-state current after dI G /dt = 0.2 A/µs
triggering
T2+ G+-50A/µs T2+ G--50A/µs T2- G--50A/µs T2- G+-10A/µs I GM Peak gate current -2A V GM Peak gate voltage -5V P GM Peak gate power -5W P G(AV)Average gate power over any 20 ms period
-0.5W T stg Storage temperature -40150˚C T j
Operating junction -125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs.查询BT131 series供应商
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT
R
th j-lead Thermal resistance full cycle--60K/W junction to lead half cycle--80K/W
R
th j-a Thermal resistance pcb mounted;lead length = 4mm-150-K/W junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT
I GT Gate trigger current V
D
= 12 V; I
T
= 0.1 A
T2+ G+-0.43mA
T2+ G-- 1.33mA
T2- G-- 1.43mA
T2- G+- 3.87mA
I L Latching current V
D
= 12 V; I
GT
= 0.1 A
T2+ G+- 1.25mA
T2+ G-- 4.08mA
T2- G-- 1.05mA
T2- G+- 2.58mA
I H Holding current V
D
= 12 V; I
GT
= 0.1 A- 1.35mA
V
T On-state voltage I
T
= 2.0 A- 1.2 1.5V
V
GT Gate trigger voltage V
端午节是法定假日么D
= 12 V; I
T
= 0.1 A-0.7 1.5V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C0.20.3-V
I D Off-state leakage current V
D
= V
DRM(max)
;
T
明初风流j
= 125 ˚C-0.10.5mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT
dV
D /dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;515-V/µs off-state voltage exponential waveform; R
GK
= 1 kΩ
t gt Gate controlled turn-on I
TM
= 1.5 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;-2-µs time dI
G
/dt = 5 A/µs
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
-50
50100150
00.5
11.522.53Tj / C
IH(Tj)IH(25C)
050
100150
1
10
100
1000
Tj / C
古韵遗风dVD/dt (V/us)
MECHANICAL DATA
1. Epoxy meets UL94 V0 at 1/8".
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