SMALL FORM FACTOR PLASMA SOURCE FOR HIGH DENSITY W
专利名称：SMALL FORM FACTOR PLASMA SOURCE FOR HIGH DENSITY WIDE RIBBON ION
BEAM GENERATION
发明人：BILOIU, Costel,SCHEUER, Jay,OLSON,
Joseph,SINCLAIR, Frank,DISTASO, Daniel 申请号：US2011/033457
申请日：20110421
公开号：WO2011/139587A1
公开日：
20111110
专利内容由知识产权出版社提供
专利附图：
摘要：An ion source (200), capable of generating high - density wide ribbon ion beam,怎么申请icp
utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width (w), which is the dimension along which the beam is extracted, is greater than its height (h). The depth (d) of the source may be defined to maximize energy transfer from the antenna (203) to the plasma. In a further embodiment, a multicusp magnetic field (210, 211, 212) surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.
申请人：VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.,BILOIU, Costel,SCHEUER, Jay,OLSON, Joseph,SINCLAIR, Frank,DISTASO, Daniel
地址：01930 US,01966 US,01969 US,01915 US,02170 US,01860 US
国籍：US,US,US,US,US,US
代理人：FABER, Scott, R.
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